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datasheet product structure : silicon monolithic integrated c ircuit this product has no designed protection against rad ioactive rays 1/34 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 14 ? 001 09.sep.2014 rev.001 t sz02201 - 0r1r0g100200 - 1 - 2 www.rohm.com serial eeprom series automotive eeprom 125c operation spi bus eeprom BR25H256-2AC general description BR25H256-2AC is a 256kbit serial eeprom of spi bus interface method. features packages w(typ) x d(typ) x h(max) spi bus interface (cpol, cpha)=(0,0), (1,1) voltage range : 2.5v to 5.5v operating range : -40c to +125c clock frequency : 10mhz(max) write time : 4ms(max) page size : 64bytes bit format : 32768 x 8bit 64bytes write lockable identification page (id pag e) address auto increment function at read operation auto erase and auto end function at data rewrite write protect block setting by software memory array 1/4, 1/2, whole hold function by holdb pin low supply current write operation (5v) : 1.0ma (typ) read operation (5v) : 1.2ma (typ) standby state(5v) : 0.1 a (typ) prevention of write mistake write prohibition at power on write prohibition by wpb pin write prohibition block setting prevention of write mistake at low voltage write cycles : 1,000,000 write cycles (ta 85c) : 500,000 write cycles (ta 105c) : 300,000 write cycles (ta 125c) data retention : 100 years (ta 25c) : 60 years (ta 105c) : 50 years (ta 125c) data at shipment memory array ffh id page first 3 addresses 2fh, 00h, 0fh other addresses ffh status register wpen, bp1, bp0 0, 0, 0 lock status ls 0 sop8, sop-j8 packages aec-q100 qualified sop8 5.00mm x 6.20mm x 1.71mm sop - j8 4.90mm x 6.00mm x 1.65mm
BR25H256-2AC 2/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 absolute maximum ratings (ta=25c) parameter symbol rating unit supply voltage vcc -0.3 to +6.5 v power dissipation pd 0.56 (sop8) (note1) w 0.56 (sop-j8) (note2) storage temperature range tstg -65 to +150 c operating temperature range topr -40 to +125 c terminal voltage -0.3 to vcc+0.3 v electrostatic discharge voltage (human body model) v esd -6000 to +6000 v (note1) derate by 4.5mw/c when operating above ta= 25c. (note2) derate by 4.5mw/c when operating above ta= 25c. caution: operating the ic over the absolute maximum ratings may damage the ic. the damage can either be a shor t circuit between pins or an open circuit between pins and the internal circuitry. therefore, it is important to consider circuit protection mea sures, such as adding a fuse, in case the ic is ope rated over the absolute maximum ratings. memory cell characteristics (vcc=2.5v to 5.5v) parameter limit unit condition min typ max write cycles (note3, 4) 1,000,000 cycles ta 85c 500,000 cycles ta 105c 300,000 cycles ta 125c data retention (note3) 100 years ta 25c 60 years ta 105c 50 years ta 125c (note3) not 100% tested (note4) the write cycles is defined for unit of 4 d ata bytes with the same address bits of a14 to a2. recommended operating ratings parameter symbol rating unit supply voltage vcc 2.5 to 5.5 v input voltage v in 0 to vcc v input / output capacitance (ta=25c, frequency=5mhz ) parameter symbol conditions min max unit input capacitance (note5) c in v in =gnd 8 pf output capacitance (note5) c out v out =gnd 8 pf (note5) not 100% tested
BR25H256-2AC 3/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 dc characteristics (unless otherwise specified, ta=-40c to +125c, v cc=2.5v to 5.5v) parameter symbol limit unit conditions min typ max input high voltage v ih 0.7 vcc vcc+0.3 v 2.5v vcc 5.5v input low voltage v il -0.3 0.3 vcc v 2.5v vcc 5.5v output low voltage v ol 0 0.4 v i ol =2.1ma output high voltage v oh 0.8 vcc vcc v i oh =-2.0ma input leakage current i li -2 +2 a v in =0v to vcc output leakage current i lo -2 +2 a v out =0v to vcc, csb=vcc supply current (write) i cc1 2.5 ma vcc=2.5v, f sck =5mhz, t e/w =4ms v ih /v il =0.9vcc/0.1vcc, so=open i cc2 5.5 ma vcc=5.5v, f sck =5 or 10 mhz, t e/w =4ms v ih /v il =0.9vcc/0.1vcc, so=open supply current (read) i cc3 1.5 ma vcc=2.5v, f sck =5mhz v ih /v il =0.9vcc/0.1vcc, so=open i cc4 2.0 ma vcc=5.5v, f sck =5mhz v ih /v il =0.9vcc/0.1vcc, so=open i cc5 4.0 ma vcc=5.5v, f sck =10mhz v ih /v il =0.9vcc/0.1vcc, so=open standby current i sb 10 a vcc=5.5v csb=holdb=wpb=vcc, sck=si=vcc or 0v, so=open
BR25H256-2AC 4/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 ac characteristics (ta=-40c to +125c, unless othe rwise specified, load capacitance c l1 =100pf) parameter symbol 2.5v vcc 5.5v 4.5v vcc 5.5v unit min typ max min typ max sck frequency f sck 0.01 5 0.01 10 mhz sck high time t sckwh 85 40 ns sck low time t sckwl 85 40 ns csb high time t cs 85 40 ns csb setup time t css 90 30 ns csb hold time t csh 85 30 ns sck setup time t scks 90 30 ns sck hold time t sckh 90 30 ns si setup time t dis 20 10 ns si hold time t dih 30 10 ns data output delay time1 t pd1 60 40 ns data output delay time2 (c l2 =30pf) t pd2 50 30 ns output hold time t oh 0 0 ns output disable time t oz 100 40 ns holdb setting setup time t hfs 0 0 ns holdb setting hold time t hfh 40 30 ns holdb release setup time t hrs 0 0 ns holdb release hold time t hrh 70 30 ns time from holdb to output high-z t hoz 100 40 ns time from holdb to output change t hpd 60 40 ns sck rise time (note1) t rc 2 2 s sck fall time (note1) t fc 2 2 s output rise time (note1) t ro 40 20 ns output fall time (note1) t fo 40 20 ns write time t e/w 4 4 ms (note1) not 100% tested ac measurement conditions parameter symbol limit unit min typ max load capacitance1 c l1 100 pf load capacitance2 c l2 30 pf input rise time 50 ns input fall time 50 ns input voltage 0.2 vcc / 0.8 vcc v input / output judgment voltage 0.3 vcc / 0.7 vcc v 0.7vcc 0.2vcc 0.8vcc ?R 0.3vcc ?R figure 1. input / output judgment voltage input / output voltage input voltage
BR25H256-2AC 5/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 serial input / output timing si is taken into ic inside in sync with data rise e dge of sck. input address and data from the most si gnificant bit msb. figure 2. input timing figure 3. input / output timing so is output in sync with data fall edge of sck. da ta is output from the most significant bit msb. figure 4. hold timing csb sck si so tcs tcss tscks tsckwl tsckwh tdis tdih trc tfc high-z csb sck si so tpd toh tro,tfo toz tcsh tsckh tcs high - z csb sck si n+1 "h" "l" n dn n- 1 dn dn- 1 holdb so dn+1 thfs thfh thoz thrs thrh tdis thpd high-z
BR25H256-2AC 6/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 block diagram pin configuration pin description pin number pin name input / output function 1 csb input chip select input 2 so output serial data output 3 wpb input write protect input write status register command is prohibited. 4 gnd all input / output reference voltage, 0v 5 si input serial data input start bit, instruction code, address and data input 6 sck input serial clock input 7 holdb input hold input serial communications may be suspended temporarily (hold state). 8 vcc supply voltage so instruction decode control clock generation voltage detection write inhibition high voltage generator instruction register 256kbit eeprom address register data register address decoder read/write amp 8bit 8bit status register csb sck holdb 15bit 15bit wpb si identification page figure 5. block diagram figure 6. pin assignment diagram vcc holdb sck si csb so wpb gnd BR25H256-2AC
BR25H256-2AC 7/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 typical performance curves figure 9. output low voltage v ol , i ol (vcc=2.5v) figure 10. output high voltage v oh , i oh (vcc=2.5v) figure 7. input high voltage v ih (csb, sck, si, holdb, wpb) figure 8. input low voltage v il (csb, sck, si, holdb, wpb) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 1 2 3 4 5 6 supply voltage : vcc v input low voltage : v il v spec 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 1 2 3 4 5 6 supply voltage : vcc v input high voltage : v ih v spec 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -6 -5 -4 -3 -2 -1 0 output high current : i oh ma output high voltage : v oh v spec 0.0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 6 output low current : i ol ma output low voltage : v ol v spec ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c
BR25H256-2AC 8/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 typical performance curves - continued figure 11. input leakage current i li (csb, sck, si, holdb, wpb) figure 12. output leakage current i lo (so) figure 13. supply current (write) i cc1,2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 supply voltage : vcc v input leakage current: i li [a] spec 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 supply voltage : vcc v output leakage current: i lo [a] spec figure 14. supply current (read) i cc3,4 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 supply voltage : vcc v supply current (read) : i cc3, 4 [ma] spec spec 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 1 2 3 4 5 6 supply voltage : vcc v supply current (write) : i cc1, 2 [ma] spec spec ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c
BR25H256-2AC 9/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 typical performance curves - continued figure 18. sck high time t sckwh figure 15. supply current (read) i cc5 figure 17. sck frequency f sck figure 16. standby current i sb 0 2 4 6 8 10 12 0 1 2 3 4 5 6 supply voltage : vcc v standby current : i sb [a] spec 0.1 1 10 100 0 1 2 3 4 5 6 supply voltage : vcc v sck frequency : f sck [mhz] spec spec 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 1 2 3 4 5 6 supply voltage : vcc v supply current (read) : i cc5 [ma] spec 0 20 40 60 80 100 0 1 2 3 4 5 6 supply voltage : vcc v sck high time : t sckwh [ns] spec spec ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c
BR25H256-2AC 10/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 typical performance curves - continued figure 21. csb setup time t css figure 19. sck low time t sckwl figure 20. csb high time t cs 0 20 40 60 80 100 0 1 2 3 4 5 6 supply voltage : vcc v csb setup time : t css [ns] spec spec figure 22. csb hold time t csh 0 20 40 60 80 100 0 1 2 3 4 5 6 supply voltage : vcc v csb hold time : t csh [ns] spec spec 0 20 40 60 80 100 0 1 2 3 4 5 6 supply voltage : vcc v sck low time : t sckwl [ns] spec spec 0 20 40 60 80 100 0 1 2 3 4 5 6 supply voltage : vcc v csb high time : t cs [ns] spec spec ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c
BR25H256-2AC 11/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 typical performance curves - continued figure 23. si setup time t dis figure 24. si hold time t dih figure 25. data output delay time1 t pd1 (c l1 =100pf) 0 10 20 30 40 50 0 1 2 3 4 5 6 supply voltage : vcc v si setup time : t dis [ns] spec spec 0 10 20 30 40 50 0 1 2 3 4 5 6 supply voltage : vcc v si hold time : t dih [ns] spec spec 0 20 40 60 80 100 0 1 2 3 4 5 6 supply voltage : vcc v data output delay time1 : t pd1 [ns] spec spec figure 26. data output delay time2 t pd2 (c l2 =30pf) 0 20 40 60 80 100 0 1 2 3 4 5 6 supply voltage : vcc v data output delay time2 : t pd2 [ns] spec spec ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c
BR25H256-2AC 12/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 typical performance curves - continued figure 30. time from holdb to output high-z t hoz 0 20 40 60 80 100 120 0 1 2 3 4 5 6 supply voltage : vcc v spec spec time from holdb to output high-z : t hoz [ns] figure 27. output disable time t oz figure 29. holdb release hold time t hrh figure 28. holdb setting hold time t hfh 0 20 40 60 80 100 0 1 2 3 4 5 6 supply voltage : vcc v holdb release hold time : t hrh [ns] spec spec 0 10 20 30 40 50 0 1 2 3 4 5 6 supply voltage : vcc v holdb setting hold time : t hfh [ns] spec spec 0 20 40 60 80 100 120 0 1 2 3 4 5 6 supply voltage : vcc v output disable time : t oz [ns] spec spec ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c
BR25H256-2AC 13/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 typical performance curves - continued figure 33. output fall time t fo figure 32. output rise time t ro figure 31. time from holdb to output change t hpd 0 20 40 60 80 100 0 1 2 3 4 5 6 supply voltage : vcc v output fall time : t fo [ns] spec spec 0 20 40 60 80 100 0 1 2 3 4 5 6 supply voltage : vcc v output rise time : t ro [ns] spec spec 0 20 40 60 80 100 0 1 2 3 4 5 6 supply voltage : vcc v spec spec time from holdb to output change : t hpd [ns] figure 34. write time t e/w 0 2 4 6 8 0 1 2 3 4 5 6 supply voltage : vcc v write time : t e/w [ms] spec ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c ta= ta= ta= - 40c 25 c 125 c
BR25H256-2AC 14/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 1. features (1) status register this ic has the status registers. status registers are of 8 bits and express the following parameters. wpen, bp0 and bp1 can be set by write status regist er command. these 3 bits are memorized into the eep rom, therefore are valid even when supply voltage is tur ned off. write cycles and data retention of status registers are same as characteristics of the eeprom. wen can be set by write enable command and write di sable command. wen becomes write disable status whe n supply voltage is turned off. r DD /b is for write confirmation, therefore cannot be s et externally. the values of status register can be read by read s tatus register command. table 1. status register d7 d6 d5 d4 d3 d2 d1 d0 wpen 0 0 0 bp1 bp0 wen r DD /b table 2. function of status register bit memory location function content wpen eeprom pin enable / disable designation bit for wpb pin wpen=0=invalid, w pen=1=valid wpen bit enables / disables the function of wpb pin. bp1 bp0 eeprom eeprom write disable block designation bit bp1 and bp0 bits designate the write disable block of eeprom. refer table 3. write disable block setting. wen register write enable/write disable confirmation bit for write, wrsr, wrid and lid wen=0=prohibited, w en=1=permitted wen bit indicates the status of write enable or write disable for write, wrsr, wrid, lid. r DD /b register write cycle status(ready DDDDDDD /busy) confirmation bit r DD /b=0=ready , r DD /b=1=busy r DD /b bit indicates the status of ready or busy of the write cycle. table 3. write disable block setting status register protected block protected addresses bp1 bp0 0 0 none none 0 1 upper 1/4 6000h to 7fffh 1 0 upper 1/2 4000h to 7fffh 1 1 whole memory 0000h to 7fffh, id page
BR25H256-2AC 15/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 (2) write protect mode by wpb pin by setting wpb = low with wpen = 1, write status re gister command is disabled. only when wpen bit is s et 1, the wpb pin functions become valid. however, when w rite cycle is in execution, no interruption can be made. table 4. write protect mode wpen bit wpb pin instruction wrsr write/wrid/lid 0 x writable writable 1 1 writable writable 1 0 write protected writable wpb is normally fixed to high or low for use, but w hen wpb is controlled so as to cancel write status register command, pay attention to the following wpb valid t iming. write status register command is executed, by setti ng wpb = low in cancel valid area, command can be c ancelled. the data area (from 7th fall of sck to 16th rise of sck) becomes the cancel valid area. however, once write is started, any input cannot be cancelled. wpb input becomes do nt care, and cancellation becomes invalid. (3) hold mode by holdb pin by the holdb pin, serial communication can be stopp ed temporarily (hold status). holdb pin carries out serial communications normally when it is high. to get in hold status, at serial communication, when sck = lo w, set the holdb pin low. at hold status, sck and si become do nt care, and so becomes high impedance (high-z). t o release the hold status, set the holdb pin high whe n sck = low. after that, communication can be resta rted from the point before the hold status. for example, when hold status is made after a5 address input at read command, after release of hold status, by starting a4 addres s input, read command can be restarted. when in hol d status, leave csb = low. when it is set csb = high in hold status, the ic is reset, therefore communication af ter that cannot be restarted. figure 35. wpb valid timing (wrsr) 6 7 instruction code data te/w data write time sck 15 16 invalid csb invalid valid instruction write protect figure 36. hold status sck holdb hold status hold status
BR25H256-2AC 16/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 (4) id page this ic has 64 bytes write lockable identification page (id page) in addition to memory array. the data in the first 3 addresses are for device id entification. these data are over written by write id page command. table 5. data in the first 3 addresses id page address data content 00h 2fh manufacturer code (rohm) 01h 00h interface method (spi) 02h 0fh memory density (256kbit) by setting lock status (ls) bit to 1 with lock id page command, it is prohibited to write to id page permanently. it is not reversible to set from id page lock statu s (ls=1) to id page lock release status (ls=0). table 6. function of lock status bit memory location function content ls eeprom id page lock/ lock release status designation bit ls=0=id page lock release ls=1=id page lock ls bit can set lock status to id page. (5) ecc function this ic has ecc bits for error correction to each 4 data bytes with the same address bits of a14 to a2 . in the read operation, even if there is 1 bit data error in the 4 bytes, ic corrects to correct data by ecc functi on and outputs data corrected. even if write operation is started with only 1 byte data input, this ic rewrites the data o f 4 bytes with the same address bits of a14 to a2 and the data of ecc bits added to these 4 bytes data. in order to maxim ize write cycles specified, it is recommended to write with d ata input of each 4 bytes with the same address bit s of a14 to a2. table 7. example of 4 data bytes with the same addr ess bits of a14 to a2 (address 0000h,0001h,0002h,00 03h) same address bits from a14 to a2 non- common address a14 a13 a12 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0000h 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0001h 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0002h 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0003h
BR25H256-2AC 17/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 2. instruction mode after setting csb pin from high to low, to e xecute each command, input instruction code, addres s and data from the most significant bit msb. table 8. instruction mode instruction content instruction code (8bit) address(msb) / data (8bit) address (lsb) (8bit) data (8bit) wren write enable 0000 0110 - - - wrdi write disable 0000 0100 - - - read read 0000 0011 a15 to a8 (note1) a7 to a0 d7 to d0 output write write 0000 0010 a15 to a8 (note1) a7 to a0 d7 to d0 input rdsr read status register 0000 0101 d7 to d0 output (note2) - - wrsr write status register 0000 0001 d7 to d0 input (note2) - - rdid read id page 1000 0011 0000 0000 00a5 to a0 d7 to d0 output wrid write id page 1000 0010 0000 0000 00a5 to a0 d 7 to d0 input rdls read lock status 1000 0011 0000 0100 0000 0000 d7 to d0 output (note3) lid lock id page 1000 0010 0000 0100 0000 0000 d7 to d0 input (note3) (note1) address bit a15 = dont care (note2) refer figure 43. , figure 44.. (note3) refer figure 47. , figure 48..
BR25H256-2AC 18/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 3. timing chart (1) write enable command (wren) it is set to write enable status by write enable co mmand. as for this command, set csb to low, and the n input the instruction code of write enable command. this comm and is accepted at the 7th rise of sck. even with i nput over 7 clocks, command becomes valid. before carrying out write command, write status reg ister command, write id page command and lock id pa ge command, it is necessary to set write enable status by the write enable command. (2) write disable command (wrdi) it is set to write disable status, wen bit becomes to 0, by write disable command. as for this comma nd, set csb to low, and then input the instruction code of write d isable command. this command is accepted at the 7th rise of sck. even with input over 7 clocks, command becomes vali d. if write command, write status register command, wr ite id page command or lock id page command is inpu t in the write disable status, commands are cancelled. and e ven in the write enable status, once write command, write status register command, write id page command or lock id page is executed, it gets in the write disable stat us. after power on, this ic is in write disable status. figure 37. write enable command figure 38. write disable command high-z 6 0 3 7 1 2 4 5 csb sck so si 0 0 0 0 0 1 1 0 high-z 0 0 0 0 si 0 1 0 0 0 3 1 2 4 7 csb sck 5 6 so
BR25H256-2AC 19/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 (3) read command (read) by read command, data of eeprom can be read. as for this command, set csb to low, then input address a fter instruction code of read command. this ic starts da ta output of the designated address. data output is started from sck fall of 23 clock, and from d7 to d0 sequentiall y. this ic has increment read function. after outpu t of data for 1 byte (8bits), by continuing input of sck, data of t he next address can be read. increment read can rea d all the addresses of eeprom array. after reading data of th e most significant address, by continuing increment read, data of the least significant address is read. (4) write command (write) by write command, data of eeprom can be written. as for this command, set csb to low, then input addre ss and data after instruction code of write command. then, by making csb to high, the ic starts write operati on. the write time of eeprom requires time of t e/w (max 4ms). to start write operation, set csb low t o high after taking the last data (d0), and before the next sck clock starts. at other timing, write command is not executed, and t his write command is cancelled. during write operation, other than read status regi ster command is not accepted. this ic has page write function, and after input of data for 1 byte (8bits), by continuing data input without setting csb high to low, data up to 64 bytes can be written for one t e/w . in page write, the addressed lower 6 address bits are incremented internally at every time when data of 1 byte is inputted and data is written to respective addresses. when the data input exceeds the last address byte of the page, address rolls over to the first address byte of the same page. it is not recommended to input data over 64 bytes, it is recommended to input data in 64 bytes. in cas e of the data input over 64 bytes, it is explained in table 10. figure 41. write command (page write) high - z 11 1 1 0 0 3 7 1 2 d6 so cs b sck si 4 5 a1 2 6 8 a14 x a0 a1 d7 23 30 24 d0 0 0 0 0 0 d2 d1 a1 3 10 9 d7 instruction c ode(8bit) address input (16bit) 31 data outputs of f irst by te ( 8bit) second by te figure 39. read command figure 40. write command (byte write) x =dont care high - z x=don't care 31 d0 0 0 0 0 0 d2 d1 d7 23 30 24 d6 0 a0 a1 x 1 1 2 4 0 cs b sck si so 0 3 7 8 5 6 a1 2 a14 11 a1 3 10 9 3 2 csb rising valid timing to start write operation instruction code (8bit) address input ( 16 bit) data input (8bit) high - z (8n+24) - 1 3 2 d 7 0 0 0 0 0 d 1 d 0 d7 23 3 1 24 d6 0 a0 a1 x 1 1 2 4 0 cs b sck si so 0 3 7 8 5 6 11 2 5 30 3 3 8n+24 d 6 d7 d6 d0 csb rising valid timing to start write operation (8n+24) - 2 (8n+24) - 7 (8 n +24) - 8 x=dont care a 13 10 a 12 9 instruction code (8bit) data input of first byte (8bit) data input of nth byte address input (16bit) a14
BR25H256-2AC 20/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 (a) page write function column 0 column 1 column 2 ??? column 62 column 63 page 0 0000h 0001h 0002h ??? 003eh 003fh page 1 0040h 0041h 0042h ??? 007eh 007fh page 2 0080h 0081h 0082h ??? 00beh 00bfh ? ? ? ? ? ? ? ? ? ? ? ? ? ? page 510 7f80h 7f81h 7f82h ??? 7fbeh 7fbfh page 511 7fc0h 7fc1h 7fc2h ??? 7ffeh 7fffh in case of page write command with lower than 64 b ytes data input table 9. example of page write with 2 bytes data in put no. 4 bytes group group 0 ??? ??? group 15 addresses of page 0 0000h 0001h 0002h 0003h 0004h ??? 003ch 003dh 003eh 003fh previous data 00h 01h 02h 03h 04h ??? 3ch 3dh 3eh 3fh input data for page write (2 bytes) aah 55h - - - ??? - - - - the data after write operation aah 55h 02h 03h 04h ??? 3ch 3dh 3eh 3fh no. these data are eeprom data before write operation. no. inputted 2 bytes data aah, 55h from address 0000h. no. if write operation is executed with the data of no. , the data are changed from the data of no. to the data of no. . the data of address 0000h, 0001h are changed to dat a aah, 55h, the data of address 0002h, 0003h, the 4 bytes group of group 0, are over-written to data 02 h, 03h. when write command is cancelled, eeprom data keep n o. . in case of page write command with more than 64 by tes data input table 10. example of page write with 66 bytes data input no. 4 bytes group group 0 ??? ??? group 15 addresses of page 0 0000h 0001h 0002h 0003h 0004h ??? 003ch 003dh 003eh 003fh previous data 00h 01h 02h 03h 04h ??? 3ch 3dh 3eh 3fh input data for page write (66 bytes) 55h aah 55h aah 55h ??? 55h aah 55h aah ffh 00h - - - ??? - - - - the data after write operation ffh 00h 02h 03h 55h ??? 55h aah 55h aah no. these data are eeprom data before write operation. no. inputted 66 bytes data 55h, aah, ???? , 55h, aah, ffh, 00h from address 0000h. the data of address 0000h, 0001h are set to data 55 h, aah first. the data of address 0002h, 0003h are set to data 55h, aah. after inputting data to maxim um byte (003fh), the data address 0000h, 0001h are set to data ffh, 00h again. no data input to addres s 0002h, 0003h again. no. if write operation is executed with the data of no. , the data are changed from the data of no. to the data of no. . the data of address 0000h, 0001h are changed to ffh , 00h inputted data later, not to 55h, aah inputted data first. the data of address 0002h, 0003h, the 4 bytes group of group 0, are over-written to 02h, 0 3h of previous data, not to 55h, aah inputted data first. the data of other addresses are changed to 55h, aah ???? , 55h, aah. when write command is cancelled, eeprom data keep n o. . roll over in page write command, when data is set to the last address of a page (e.g. address 003fh of page 0) , the next data will be set to the first address of the same p age (e.g. address 0000h of page 0). this is why p age write address increment is available in the same page. figure 42. eeprom physical address for page write c ommand (64byte) these column addresses are the last address of each pages. 64 bytes of page these column addresses are the first address of each pages.
BR25H256-2AC 21/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 (5) read status register command (rdsr) by read status register command, data of status reg ister can be read. as for this command, set csb to low, then input instruction code of read status register comm and. this ic starts data output of the status regis ter. data output is started from sck fall of 7 clock, and from d7 to d0 sequentially. this ic has increment read functi on. after output of data for 1 byte (8bits), by continuing input of sck , this ic repeats to output data of the status regi ster. even if in write operation, read status register co mmand can be executed. (6) write status register command (wrsr) write status register command can write status regi ster data. the data can be written by this command are 3 bits, that is, wpen (d7), bp1 (d3) and bp0 (d2) among 8 b its of status register. as for this command, set cs b to low, and input instruction code of write status register command, and input data. then, by making csb to hi gh, this ic starts write operation. write time requires time of t e/w as same as write command. as for csb rise, start c sb after taking the last data bit (d0), and before the next sck clock starts. at other timing, command is cance lled. to the write disabled block, write cannot be made, and only read can be made. during write operation, other than read status regi ster command is not accepted. csb sck high-z x=don't care 0 0 0 0 1 wpen 0 1 2 4 0 si so 0 3 7 8 5 6 9 10 11 12 13 14 15 x bp1 bp0 d7 d6 d5 d4 d3 d2 d1 d0 0 data output (8bit) instruction code (8bit) x x x x figure 43. read status register command d7 d6 d5 d4 0 0 bp0 0 bp1 d3 d2 d1 d0 13 csb sck si 1 1 10 6 0 so 14 1 2 wen r/b 11 15 3 7 9 0 5 12 0 0 0 0 0 4 8 w pen data output (8bi t) instruction code (8bit) high-z figure 44. write status register command
BR25H256-2AC 22/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 (7) read id page command (rdid) by read id page command, data of id page can be rea d. as for this command, set csb to low, then input address after instruction code of read id page command. inp ut address bit a10 as 0, other upper address bits a14 to a6 as 0. by inputting lower address bits a5 to a0, it i s possible to address to 64 bytes id page. data out put is started from sck fall of 23 clock, and from d7 to d0 sequentiall y. this ic has increment read function. after outpu t of data for 1 byte (8bits), by continuing input of sck, data of t he next address can be read. after reading data of the most significant address of id page, by continuing incre ment read, data of the least significant address of id page is read. (8) write id page command (wrid) by write id page command, data of id page can be wr itten. as for this command, set csb to low, then in put address and data after instruction code of write id page co mmand. input address bit a10 as 0, other upper ad dress bits a14 to a6 as 0. by inputting lower address bits a5 to a0, it is possible to address to 64 bytes id page. then, by making csb to high, the ic starts write operation. to star t write operation, set csb low to high after taking the last data (d0), and before the next sck clock starts. at other timi ng, write id page command is not executed, and this write id page command is cancelled. the write time of eeprom requ ires time of t e/w (max 4ms). during write operation, other than read status regi ster command is not accepted. in case of lock status (ls) bit 1, write id page command cant be executed. write id page command has page write function same as write command. figure 45. read id page command figure 46. write id page command high - z 11 1 1 0 0 3 7 1 2 d 6 so cs b sck si 4 5 a12 6 8 0 a0 a1 d7 23 30 24 d0 1 0 0 0 0 d2 d 1 a13 10 9 d7 instruction code(8bit) a ddress input (16bit) 31 data outputs of first byte ( 8bit) second byte a14 high-z 31 d0 0 0 0 0 d2 d 1 d7 23 30 24 d 6 0 a0 a1 0 1 1 2 4 0 cs b sck si so 0 3 7 8 5 6 a12 a14 11 a1 3 10 9 32 csb rising valid timing to s tart write operation instruction code (8bit) address input (16bit) data input (8bit) 1
BR25H256-2AC 23/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 (9) read lock status command (rdls) by read lock status command, data of lock status ca n be read. as for this command, set csb to low, the n input address after instruction code of read lock status command. input address bit a10 as 1, other addres s bits a14 to a0 as 0. data output is started from sck fall of 23 clock, and from d7 to d0 sequentially. the data d0 indicates lock status bit. the data d7 to d1 are dont care. this ic has increment read function. after output of dat a for 1 byte (8bits), by continuing input of sck, this ic repeat s to output data of the lock status byte. in case o f lock status (ls) bit 1, id page is locked, write id page command c ant be executed. in case of ls bit 0, id page is released to lock, write id page command can be executed. (10) lock id page command (lid) by lock id page command, data of lock status can be written. in case of lock status (ls) bit 1, lock id page command cant be executed permanently. as for this command, set csb to low, then input address and dat a after instruction code of lock id page command. input add ress bit a10 as 1, other address bits a14 to a0 a s 0. the data d1 is for ls bit, other data bits are dont ca re. then, by making csb to high, the ic starts writ e operation. to start write operation, set csb low to high after ta king the last data (d0), and before the next sck cl ock starts. at other timing, lock id page command is not executed, and this lock id page command is cancelled. the wr ite time of eeprom requires time of t e/w (max 4ms). during write operation, other than read status regi ster command is not accepted. at standby state 1. standby current set csb = high, and be sure to set sck, si, wpb and holdb inputs = low or high. do not input intermedi ate electric potential. 2. timing as shown in figure.49, at standby, when sck is high , even if csb is fallen, si status is not read at f all edge. si status is read at sck rise edge after fall of csb. at standby and at power on/off, set csb = high status. figure 47. read lock status command figure 48. lock id page command figure 49. operating timing 0 1 2 command start here. si is read. even if csb is fallen at sck=si=h, si status is not read at that edge. csb sck si high - z 11 1 1 0 0 3 7 1 2 d6 so cs b sck si 4 5 a1 2 6 8 0 a0 a1 d7 23 30 24 d0 1 0 0 0 0 d2 d1 a1 3 10 9 instruction c ode(8bit) address input (16bit) 31 data outputs of f irst by te ( 8bit) second by te x ls x =d o n t care x x x x a1 4 high - z 31 d0 0 0 0 0 d2 d1 d7 23 30 24 d6 0 a0 a1 0 1 1 2 4 0 cs b sck si so 0 3 7 8 5 6 a1 2 11 a1 3 10 9 3 2 csb rising valid timing to start write operation instruction code (8bit) address input ( 16 bit) data input (8bit) 1 x ls x=don t care x x x x a1 4
BR25H256-2AC 24/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 method to cancel each command 1. read, rdid, rdls ? method to cancel : cancel by csb = high 2. rdsr ? method to cancel : cancel by csb = high 3. write, wrid, lid a instruction code, address input area cancellation is available by csb = high. b data input area (d7 to d1 input area) cancellation is available by csb = high. c data input area (d0 area) when csb is started, write starts. after csb rise, cancellation cannot be made by any means. d t e/w area cancellation is available by csb = high. however, w hen write starts (csb is started) in the area c, cancel lation cannot be made by any means. and by inputting on sck clock, cancellation cannot be made. in page write mode, there is write enable area at e very 8 clocks note 1) if v cc is made off during write execution, designated add ress data is not guaranteed, therefore write it once again. note 2) if csb is started at the same timing as tha t of the sck rise, write execution / cancel becomes unstable, therefore, it is recommended to fall in sck = low a rea. as for sck rise, assure timing of t css / t csh or higher. 4. wrsr a from instruction code to 15th rising of sck cancel by csb = high. b from 15th rising of sck to 16th rising of sck (writ e enable area) when csb is started, write starts. c after 16th rising of sck cancel by csb = high. however, when write starts (csb is started) in the area b, cancellation cannot be made by any means. and, by inputting on sck clock, cancellation cannot be made. note 1) if v cc is made off during write execution, designated add ress data is not guaranteed, therefore write it once again. note 2) if csb is started at the same timing as tha t of the sck rise, write execution / cancel becomes unstable, therefore, it is recommended to fall in sck = low a rea. as for sck rise, assure timing of t css / t csh or higher. 5. wren/wrdi a from instruction code to 7th rising of sck cancel by csb = high. b cancellation is not available when csb is started after 7th clock. instruction code address cancel available in all areas of read modes data 8bits 16bits 8bits figure 50. read, rdid, rdls cancel valid timing instruction code cancel available in all areas of rdsr data 8 bits 8 bits figure 51. rdsr cancel valid timing instruction code address a data t e/ w b d c 8 bits 16 bits 8 bits figure 54. wren/wrdi cancel valid timing d7 b d6 d5 d4 d3 d2 d1 d0 sck si c figure 52. write, wrid, lid cancel valid timing instruction code data t e/w 8 bits 14 15 16 17 d1 d0 a b c 8 bits a b c sck si instruction code 8 bits 6 7 8 a b sck figure 53. wrsr cancel valid timing
BR25H256-2AC 25/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 high speed operation in order to realize stable high speed operations, p ay attention to the following input / output pin co nditions. 1. pull up, pull down resistance for input pins when to attach pull up, pull down resistance to eep rom input pins, select an appropriate value for the microcontroller v ol , i ol from v il characteristics of this ic. 2. pull up resistance and, in order to prevent malfunction, mistake write at power on/off, be sure to make csb pull up. 3. pull down resistance further, by amplitude v ihe , v ile of signal input to eeprom, operation speed changes . by inputting signal of amplitude of vcc / gnd level to input, more stable high speed operat ions can be realized. on the contrary, when amplitu de of 0.8vcc / 0.2vcc is input, operation speed becomes slow. (note1) in order to realize more stable high speed operatio n, it is recommended to make the values of r pu , r pd as large as possible, and make the amplitude of signal input to eeprom cl ose to the amplitude of vcc / gnd level. (note1) at this moment, operating timing guaranteed value is guaranteed. figure 57. v il dependency of data output delay time t pd 4. so load capacitance condition load capacitance of so pin affects upon delay chara cteristic of so output. (data output delay time, ti me from holdb to high-z) in order to make output delay characteristi c into higher speed, make so load capacitance small . in concrete, do not connect many devices to so bus, make the wire bet ween the controller and eeprom short, and so forth . 5. other cautions make the wire length from the microcontroller to ee prom input signal same length, in order to prevent setup / hold violation to eeprom, owing to difference of wire length of ea ch input. i o lm v i le v o lm low output low input microcontroller eeprom r p u figure 55. pull up resistance with the value of r pu to satisfy the above equation, v olm becomes 0.4v or lower, and with v ile (=1.5v), the equation is also satisfied. ? v ile : v il specifications of eeprom ? v olm : v ol specifications of microcontroller ? i olm : i ol specifications of microcontroller i ohm v i he v o hm microcontroller eeprom high output high input r p d figure 56. pull down resistance example) when v cc =5v, v ohm =v cc -0.5v, i ohm 0.4ma, v ihe =v cc 0.7v, from the equation example) when vcc=5v, v ile =1.5v, v olm =0.4v, i olm =2ma, from the equation , ??? ??? ??? ??? ? v ihe : v ih specifications of eeprom ? v ohm : v oh specifications of microcontroller ? i ohm : i oh specifications of microcontroller olm olm cc pu i v v r - 3 ile olm v v -3 - 10 2 4 0 5 3 . r pu ] k [ . r pu 32 ohm ohm pd i v r 3 ihe ohm v v 3 -3 - 10 40 5 0 5 3 . . r pd ] k [ . r pu 3 11 3 \ t pd - v il characteristic 0 10 20 30 40 50 60 70 80 0 0.2 0.4 0.6 0.8 1 v il [v] t pd [ns] vcc=2.5v ta=25 c vih=vcc c l =100pf spec
BR25H256-2AC 26/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 i/o equivalence circuit 1. output circuit 2. input circuit oeint. so figure 58. so output equivalent circuit csb reset int. figure 59. csb input equivalent circuit sck si holdb wpb figure 60. sck input equivalent circuit figure 61. si input equivalent circuit figure 62. holdb input equivalent circuit figure 63. wpb input equivalent circuit
BR25H256-2AC 27/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 power-up/down conditions 1. at power on/off, set csb = high (=vcc). when csb is low, this ic gets in input accept statu s (active). if power is turned on in this status, n oises and the likes may cause malfunction, mistake write or so. to prevent these, at power on, set csb = high. (when csb is in high status, all inputs are canceled.) (good example) csb pin is pulled up to vcc. at power off, take 10ms or higher before supply. if power is turned on without observing this conditio n, the ic internal circuit may not be reset, which please not e. (bad example) csb pin is low at power on/off. in this case, csb always becomes low (active status ), and eeprom may have malfunction, mistake write owing to noises and the likes. even when csb input is high-z, the status becomes l ike this case, which please note. 2. por circuit this ic has a por (power on reset) circuit as mista ke write countermeasure. after por , it gets in wri te disable status. the por circuit is valid only when power is on, and does not work when power is off. when power is on, if the recommended conditions of the following tr, toff, a nd vbot are not satisfied, it may become write enab le status owing to noises and the likes. table 11. recommended conditions of tr, t off, vbot 3. lvcc circuit lvcc (vcc-lockout) circuit prevents data rewrite op eration at low supply voltage, and prevents wrong w rite. at lvcc voltage (typ. =1.9v) or below, it prevent d ata rewrite. noise countermeasures 1. vcc noise (bypass capacitor) when noise or surge gets in the power source line, malfunction may occur, therefore, for removing thes e, it is recommended to attach a bypass capacitor (0.1 f) between ic vcc and gnd. at that moment, attach i t as close to ic as possible. and, it is also recommended to attach a b ypass capacitor between board vcc and gnd. 2. sck noise when the rise time (t rc ) of sck is long, and a certain degree or more of n oise exists, malfunction may occur owing to clock bit displacement. to avoid this, a schmitt tr igger circuit is built in sck input. the hysteresis width of this circuit is set about 0.2v, if noises exist at sck input, set the n oise amplitude 0.2vp-p or below. and it is recommen ded to set the rise time (t rc ) of sck 100ns or below. in the case when the rise time is 100ns or higher, take sufficient noise coun termeasures. make the clock rise, fall time as small as possible . 3. wpb noise during execution of write status register command, if there exist noises on wpb pin, mistake in recogn ition may occur and forcible cancellation may result, which please note. to avoid this, a schmitt trigger circuit is b uilt in wpb input. in the same manner, a schmitt trigger circuit is built in csb input, si input and holdb input too. tr toff vbot 10ms or below 10ms or higher 0.3v or below 100ms or below 10ms or higher 0.2v or below tr toff vbot 0 vcc figure 65. rise waveform figure 64. csb timing at power on / off bad example good example gnd csb vcc gnd vcc vcc
BR25H256-2AC 28/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 operational notes 1. reverse connection of power supply connecting the power supply in reverse polarity can damage the ic. take precautions against reverse po larity when connecting the power supply, such as mounting an ex ternal diode between the power supply and the ics power supply pins. 2. power supply lines design the pcb layout pattern to provide low impeda nce supply lines. separate the ground and supply li nes of the digital and analog blocks to prevent noise in the g round and supply lines of the digital block from af fecting the analog block. furthermore, connect a capacitor to ground a t all power supply pins. consider the effect of tem perature and aging on the capacitance value when using electroly tic capacitors. 3. ground voltage ensure that no pins are at a voltage below that of the ground pin at any time, even during transient c ondition. 4. ground wiring pattern when using both small-signal and large-current grou nd traces, the two ground traces should be routed s eparately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. also ensure that t he ground traces of external components do not caus e variations on the ground voltage. the ground lines must be as short and thick as possible to reduce line impedanc e. 5. thermal consideration should by any chance the power dissipation rating b e exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. the ab solute maximum rating of the pd stated in this spec ification is when the ic is mounted on a 70mm x 70mm x 1.6mm glass ep oxy board. in case of exceeding this absolute maxim um rating, increase the board size and copper area to prevent exceeding the pd rating. 6. recommended operating conditions these conditions represent a range within which the expected characteristics of the ic can be approxim ately obtained. the electrical characteristics are guaranteed under the conditions of each parameter. 7. inrush current when power is first supplied to the ic, it is possi ble that the internal logic may be unstable and inr ush current may flow instantaneously due to the interna l powering sequence and delays, especially if the i c has more than one power supply. therefore, give spe cial consideration to power coupling capacitance, power wiring, width of ground wiring, and routing o f connections. 8. operation under strong electromagnetic field operating the ic in the presence of a strong electr omagnetic field may cause the ic to malfunction. 9. testing on application boards when testing the ic on an application board, connec ting a capacitor directly to a low-impedance output pin may subject the ic to stress. always discharge capacito rs completely after each process or step. the ics power supply should always be turned off completely before conne cting or removing it from the test setup during the inspection process. to prevent damage from static discharge, g round the ic during assembly and use similar precau tions during transport and storage. 10. inter-pin short and mounting errors ensure that the direction and position are correct when mounting the ic on the pcb. incorrect mounting may result in damaging the ic. avoid nearby pins being shorted to each other especially to ground, power supply and output pin. inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid e nvironment) and unintentional solder bridge deposited in between pi ns during assembly to name a few.
BR25H256-2AC 29/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 operational notes C continued 11. unused input pins input pins of an ic are often connected to the gate of a mos transistor. the gate has extremely high i mpedance and extremely low capacitance. if left unconnected, the electric field from the outside can easily charge it. the small charge acquired in this way is enough to produce a signifi cant effect on the conduction through the transisto r and cause unexpected operation of the ic. so unless otherwise specified, unused input pins should be connected t o the power supply or ground line. 12. regarding the input pin of the ic in the construction of this ic, p-n junctions are i nevitably formed creating parasitic diodes or trans istors. the operation of these parasitic elements can result in mutual in terference among circuits, operational faults, or p hysical damage. therefore, conditions which cause these parasitic e lements to operate, such as applying a voltage to a n input pin lower than the ground voltage should be avoided. fu rthermore, do not apply a voltage to the input pins when no power supply voltage is applied to the ic. even if the po wer supply voltage is applied, make sure that the i nput pins have voltages within the values specified in the electri cal characteristics of this ic.
BR25H256-2AC 30/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 part numbering b r 2 5 h 2 5 6 x x x - 2 a c x x lineup capacity package orderable part number type quantity 256kbit sop8 reel of 2500 br25h256f -2ace2 sop-j8 reel of 2500 br25h256fj -2ace2 bus type 25 : spi operating temperature / voltage h : -40 o c to +125 o c / 2.5v to 5.5v 2 : process code a : revision c : for automotive application packaging and forming specification e2 : embossed tape and reel capacity 256 : 256kbit package f : sop8, fj : sop-j8
BR25H256-2AC 31/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 physical dimension, tape and reel information package name sop8 * order quantity needs to be multiple of the minimum quantity. embossed carrier tape tapequantity direction of feed the direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 2500pcs e2 ( ) direction of feed reel 1pin (max 5.35 (include.burr)
BR25H256-2AC 32/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 physical dimensions, tape and reel information - co ntinued package name sop-j8 * order quantity needs to be multiple of the minimum quantity. embossed carrier tape tapequantity direction of feed the direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 2500pcs e2 ( ) direction of feed reel 1pin
BR25H256-2AC 33/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 marking diagrams (top view) sop8 (top view) h 2 5 6 a part number marking lot number 1pin mark sop-j8 (top view) h 2 5 6 a part number marking lot number 1pin mark
BR25H256-2AC 34/34 datasheet www.rohm.co m ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 t s z02201 - 0r1r0g100200 - 1 - 2 09.sep.2014 rev.001 revision history date revision changes 09.sep.2014 001 new release
notice - p a a - e rev.00 3 ? 201 5 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. if you intend to use our products in devices requiring extremely high reliability ( such as medical equipment ( n ote 1 ) , aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life , bodily injury or serious damage to property ( specific applications ) , please consult with the rohm sales representative in advance. unless otherwise agreed in writing by rohm in advance, rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any rohm s products for specific applications. ( n ote1) m edical equipment classifica tion of the specific applications japan usa eu china class 2. rohm designs and manufactures its products subject to strict quality control system. however, semiconductor products can fail or malfunction at a cert ain rate. please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail - safe design against the physical injury, damage to any property, which a failure or malfunction of our products may cause. the f ollowing are examples of safety measures: [a] installation of protection circuits or other protective devices to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our p roducts are no t designed under any special or extraordinary environments or conditions, as exemplified below . accordingly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any rohms p roduct s under any specia l or extraordinary environments or conditions . if you intend to use our products under any special or extraordinary environments or conditions (as exemplified below), your independent v erification and confirmation of product performance, reliability, etc, prior to use, must be necessary : [a] use of our products in any types of liquid, including water, oils, chemicals, and organic solvents [b] use of our products outdoors or in places where the p roducts are exposed to direct sunlight or dust [c] use of our products in places where the p roducts are exposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the p roducts are exposed to static electricity or electromagnetic waves [e] use of our products in proximity to heat - producing components, plastic cords, or other flammable items [f] s ealing or coating our p roducts with resin or other coating materials [g] use of our products without cleaning residue of flux (even if you use no - clean type fluxes, cle aning residue of flux is recommended); or washing our products by using water or water - soluble cleaning agents for cleaning residue after soldering [h] use of the p roducts in places subject to dew condensation 4 . the p roducts are not subject to radiation - proof design . 5 . please verify and confirm characteristics of the final or mounted products in using the products. 6 . in particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation o f performance characteristics after on - board mounting is strongly recommended. avoid applying power exceeding normal rated power; exceeding the power rating under steady - state loading condition may negatively affect product performance and reliability. 7 . de - rate power dissipation d epending on a mbient temperature . when used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8 . confirm that operation temperature is within the specified range described in the product specification. 9 . rohm shall not be in any way responsible or liable for f ailure induced under de viant condition from what is defined in this document . precaution for mounting / circuit board design 1. when a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. in principle, the reflow soldering method must be used on a surface - mount products, the flow soldering method must be used on a through hole mount products. i f the flow soldering method is preferred on a surface - mount products, please consult with th e rohm representative in advance. for details , please refer to rohm mounting specification
notice - p a a - e rev.00 3 ? 201 5 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, please allow a sufficient margin con sidering variations of the characteristics of the p roducts and external components, including transient characteristics, as well as static characteristics. 2. you agree that application notes, reference designs, and associated data and information contain ed in this document are presented only as guidance for products use . therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contain ed in this document. rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. precaution for electrostatic this p roduct is e lectrostatic sensitive pr oduct, which may be damaged due to e lectrostatic discharge. please take proper caution in your manufacturing process and stor age so that voltage exceeding the product s maximum rating will not be applied to p roducts. please take special care under dry condi tion (e.g. grounding of human body / equipment / solder iron, isolation from charged objects, setting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connecti ons may deteriorate if the p roducts are stored in the places where : [a] the p roducts are exposed to sea winds or corrosive gases, including cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are e xposed to direct sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage condition, solderability of products out of recommended storage time period may be degraded. it is strongly recommended to confirm solderability before using p roducts of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the correct direction, which is indicated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. use p roducts within the specified time after opening a humidity barrier bag. baking is required before using p roducts of which storage time is exceeding the recommended storage time period . precaut ion for p roduct l abel a two - dimensional barcode printed on rohm p roduct s label is for rohm s internal use only . precaution for d isposition when disposing p roducts please dispose them properly using a n authorized industry waste company. precaution for foreign e xchange and foreign t rade act since concerned goods might be fallen under listed items of export control prescribed by foreign exchange and foreign trade act, please consult with rohm in case of export. precaution regarding intellectual property rights 1. all informa tion and data including but not limited to application example contained in this document is for reference only. rohm does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third pa rty regarding such information or data. 2. rohm shall not have any obligations where the claims, actions or demands arising from the combination of the products with other articles such as components, circuits, systems or external equipment (including software). 3. no license, expressly or impli ed, is granted hereby under any intellectual property rights or other rights of rohm or any third parties with respect to the products or the information contained in this document. provided, however, that rohm will not assert its intellectual property rig hts or other rights against you or your customers to the extent necessary to manufacture or sell products containing the products, subject to the terms and conditions herein. other precaution 1. this document may not be reprinted or reproduced, in whole or in part, without prior written consent of rohm. 2. the pr oducts may not be disassemble d, converted, modified, reproduced or otherwise changed without prior written consent of rohm. 3. i n no event shall you use in any way whatsoever the products and the related technical information contained in the products or this document for any military purposes , including but not limited to, the development of mass - destruction weapons . 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated com panies or third parties.
datasheet datasheet notice ? we rev.001 ? 2015 rohm co., ltd. all rights reserved. general precaution 1. before you use our pro ducts, you are requested to care fully read this document and fully understand its contents. rohm shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny rohms products against warning, caution or note contained in this document. 2. all information contained in this docume nt is current as of the issuing date and subj ec t to change without any prior notice. before purchasing or using rohms products, please confirm the la test information with a rohm sale s representative. 3. the information contained in this doc ument is provi ded on an as is basis and rohm does not warrant that all information contained in this document is accurate an d/or error-free. rohm shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information.
datasheet part number br25h256f-2ac package sop8 unit quantity 2500 minimum package quantity 2500 packing type taping constitution materials list inquiry rohs yes br25h256f-2ac - web page

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